Hi ..
I am working with DSP with DDR3 SDRAM. Ti (texas instrument ) platform has two evaluation board of DSP .
I evaluate both evaluation board schematic and found a difference in DDR3 termination .
1-- In first schematic DDR3 SDRAM termination resistors with capacitor one end VTT , other end "DGND"
2-- In second schematic termination resistors with capacitor other end connected with "1.35V" net name (VDDS_DDR_K2G). instead of "DGND".
* What is the difference in both techniques , and which technique is better. scematic samples are shown below.
Thanks
I am working with DSP with DDR3 SDRAM. Ti (texas instrument ) platform has two evaluation board of DSP .
I evaluate both evaluation board schematic and found a difference in DDR3 termination .
1-- In first schematic DDR3 SDRAM termination resistors with capacitor one end VTT , other end "DGND"
2-- In second schematic termination resistors with capacitor other end connected with "1.35V" net name (VDDS_DDR_K2G). instead of "DGND".
* What is the difference in both techniques , and which technique is better. scematic samples are shown below.
Thanks
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