**Hello everyone,**

I'm dealing with the homework given to my brother. But I could not find where and how to start the design. Actually, I did not fully understand the question. Is there anyone who can guide?

**Design Specification is GainxBandwidth (MHz) = 8MHz**

**00-05: GainxBandwidth=(XX+3) MHz**

**06-09: GainxBandwidth = XX MHz**

**10-19: GainxBandwidth = (XX/2.5) MHz**

**20-49: GainxBandwidth = (XX/5) MHZ**

**50-79: GainxBandwidth = (XX/8) MHZ**

**80-99: GainxBandwidth = (XX/10) MHz**

__Gain by means of Volts/Volts, Frequency by means of Hertz.c__

__5% of tolerance for GBW at most is acceptable__

__Design steps:__*** Use a cascaded two-stage MOSFET amplifier.**

* Bias your design by using any bias topology. Magnitude of supply voltage should be an integer between 10 and 15V. Make sure that MOSFET operates in saturation mode.

***Determine all external capacitor values as 100 µF and external resistor values according to design specifications. W/L value must be an integer, the smallest possible value for L is 1.5**

**mm.**

__* For your design homework, refer to TUBITAK YITAL 1.5__

__mm MOSFET model parameters:__

(.model nmos nmos level=3 tox=230e-10 ld=0.125e-6cc wd=0.6e-6 uo=570 vto=0.7

+theta=0.05 rs=75 rd=75 delta=0.4 nsub=1.2e16 xj=0.15e-6 vmax=2.3e5

+eta=0.0022 kappa=0.5 nfs=7e11 gamma= 0.46 phi=0.35c

.model pmos pmos level=3 tox=230e-10 ld=0.06e-6 wd=0.6e-6 uo=230 vto=-0.66

+theta=0.17 rs=120 rd=120 delta=0.4 nsub=1.2e16 xj=0.3e-6 vmax=0

+eta=0.016 kappa=0.06 nfs=1e12 gamma=0.48 phi=0.35)

*Determine the threshold voltage and (µ*Cox) parameter for MOSFET and the parasitic capacitances of MOSFET from 1.5 µm model parameters.

(Hint: in saturation regionà

*C*

_{gs}

*=*

*2*

*3*

*WL*

*C*

_{ox}

*+W*

*L*

_{ov}

*C*

_{ox},

*C*

_{gd}

*=W*

*L*

_{ov}

*C*

_{ox},

*L*

_{ov}

*verlaplength*)

*C*

_{ox}

*=*

*ɛ*

_{ox}

*t*

_{ox}

*ɛ*

_{ox}

*=*

*3.9ɛ*

_{0}

*ɛ*

_{o}

*=8.85x*

*10*

^{-14}[F/cm] L

_{ov}=0.05L

**Design Specification is GainxBandwidth (MHz) according to last two digits of the student number (XX).**

**00-05: GainxBandwidth=(XX+3) MHz**

**06-09: GainxBandwidth = XX MHz**

**10-19: GainxBandwidth = (XX/2.5) MHz**

**20-49: GainxBandwidth = (XX/5) MHZ**

**50-79: GainxBandwidth = (XX/8) MHZ**

**80-99: GainxBandwidth = (XX/10) MHz**

__Gain by means of Volts/Volts, Frequency by means of Hertz.c__

__5% of tolerance for GBW at most is acceptable__

__Design steps:__*** Use a cascaded two-stage MOSFET amplifier.**

* Bias your design by using any bias topology. Magnitude of supply voltage should be an integer between 10 and 15V. Make sure that MOSFET operates in saturation mode.

***Determine all external capacitor values as 100 µF and external resistor values according to design specifications. W/L value must be an integer, the smallest possible value for L is 1.5**

**mm.**

__* For your design homework, refer to TUBITAK YITAL 1.5__

__mm MOSFET model parameters:__

(.model nmos nmos level=3 tox=230e-10 ld=0.125e-6cc wd=0.6e-6 uo=570 vto=0.7

+theta=0.05 rs=75 rd=75 delta=0.4 nsub=1.2e16 xj=0.15e-6 vmax=2.3e5

+eta=0.0022 kappa=0.5 nfs=7e11 gamma= 0.46 phi=0.35c

.model pmos pmos level=3 tox=230e-10 ld=0.06e-6 wd=0.6e-6 uo=230 vto=-0.66

+theta=0.17 rs=120 rd=120 delta=0.4 nsub=1.2e16 xj=0.3e-6 vmax=0

+eta=0.016 kappa=0.06 nfs=1e12 gamma=0.48 phi=0.35)

*Determine the threshold voltage and (µ*Cox) parameter for MOSFET and the parasitic capacitances of MOSFET from 1.5 µm model parameters.

(Hint: in saturation regionà

*C*

_{gs}

*=*

*2*

*3*

*WL*

*C*

_{ox}

*+W*

*L*

_{ov}

*C*

_{ox},

*C*

_{gd}

*=W*

*L*

_{ov}

*C*

_{ox},

*L*

_{ov}

*verlaplength*)

*C*

_{ox}

*=*

*ɛ*

_{ox}

*t*

_{ox}

*ɛ*

_{ox}

*=*

*3.9ɛ*

_{0}

*ɛ*

_{o}

*=8.85x*

*10*

^{-14}[F/cm] L

_{ov}=0.05L

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