Hello everyone,
I'm dealing with the homework given to my brother. But I could not find where and how to start the design. Actually, I did not fully understand the question. Is there anyone who can guide?
Design Specification is GainxBandwidth (MHz) = 8MHz
00-05: GainxBandwidth=(XX+3) MHz
06-09: GainxBandwidth = XX MHz
10-19: GainxBandwidth = (XX/2.5) MHz
20-49: GainxBandwidth = (XX/5) MHZ
50-79: GainxBandwidth = (XX/8) MHZ
80-99: GainxBandwidth = (XX/10) MHz
Gain by means of Volts/Volts, Frequency by means of Hertz.c
5% of tolerance for GBW at most is acceptable
Design steps:
* Use a cascaded two-stage MOSFET amplifier.
* Bias your design by using any bias topology. Magnitude of supply voltage should be an integer between 10 and 15V. Make sure that MOSFET operates in saturation mode.
*Determine all external capacitor values as 100 µF and external resistor values according to design specifications. W/L value must be an integer, the smallest possible value for L is 1.5 mm.
* For your design homework, refer to TUBITAK YITAL 1.5mm MOSFET model parameters:
(.model nmos nmos level=3 tox=230e-10 ld=0.125e-6cc wd=0.6e-6 uo=570 vto=0.7
+theta=0.05 rs=75 rd=75 delta=0.4 nsub=1.2e16 xj=0.15e-6 vmax=2.3e5
+eta=0.0022 kappa=0.5 nfs=7e11 gamma= 0.46 phi=0.35c
.model pmos pmos level=3 tox=230e-10 ld=0.06e-6 wd=0.6e-6 uo=230 vto=-0.66
+theta=0.17 rs=120 rd=120 delta=0.4 nsub=1.2e16 xj=0.3e-6 vmax=0
+eta=0.016 kappa=0.06 nfs=1e12 gamma=0.48 phi=0.35)
*Determine the threshold voltage and (µ*Cox) parameter for MOSFET and the parasitic capacitances of MOSFET from 1.5 µm model parameters.
(Hint: in saturation regionà Cgs=23WLCox+WLovCox
, Cgd=WLovCox
, Lov
verlaplength
)
Cox=ɛoxtox
ɛox=3.9ɛ0
ɛo=8.85x10-14
[F/cm] Lov=0.05L
Design Specification is GainxBandwidth (MHz) according to last two digits of the student number (XX).
00-05: GainxBandwidth=(XX+3) MHz
06-09: GainxBandwidth = XX MHz
10-19: GainxBandwidth = (XX/2.5) MHz
20-49: GainxBandwidth = (XX/5) MHZ
50-79: GainxBandwidth = (XX/8) MHZ
80-99: GainxBandwidth = (XX/10) MHz
Gain by means of Volts/Volts, Frequency by means of Hertz.c
5% of tolerance for GBW at most is acceptable
Design steps:
* Use a cascaded two-stage MOSFET amplifier.
* Bias your design by using any bias topology. Magnitude of supply voltage should be an integer between 10 and 15V. Make sure that MOSFET operates in saturation mode.
*Determine all external capacitor values as 100 µF and external resistor values according to design specifications. W/L value must be an integer, the smallest possible value for L is 1.5 mm.
* For your design homework, refer to TUBITAK YITAL 1.5mm MOSFET model parameters:
(.model nmos nmos level=3 tox=230e-10 ld=0.125e-6cc wd=0.6e-6 uo=570 vto=0.7
+theta=0.05 rs=75 rd=75 delta=0.4 nsub=1.2e16 xj=0.15e-6 vmax=2.3e5
+eta=0.0022 kappa=0.5 nfs=7e11 gamma= 0.46 phi=0.35c
.model pmos pmos level=3 tox=230e-10 ld=0.06e-6 wd=0.6e-6 uo=230 vto=-0.66
+theta=0.17 rs=120 rd=120 delta=0.4 nsub=1.2e16 xj=0.3e-6 vmax=0
+eta=0.016 kappa=0.06 nfs=1e12 gamma=0.48 phi=0.35)
*Determine the threshold voltage and (µ*Cox) parameter for MOSFET and the parasitic capacitances of MOSFET from 1.5 µm model parameters.
(Hint: in saturation regionà Cgs=23WLCox+WLovCox
, Cgd=WLovCox
, Lov
verlaplength
)
Cox=ɛoxtox
ɛox=3.9ɛ0
ɛo=8.85x10-14
[F/cm] Lov=0.05L
I'm dealing with the homework given to my brother. But I could not find where and how to start the design. Actually, I did not fully understand the question. Is there anyone who can guide?
Design Specification is GainxBandwidth (MHz) = 8MHz
00-05: GainxBandwidth=(XX+3) MHz
06-09: GainxBandwidth = XX MHz
10-19: GainxBandwidth = (XX/2.5) MHz
20-49: GainxBandwidth = (XX/5) MHZ
50-79: GainxBandwidth = (XX/8) MHZ
80-99: GainxBandwidth = (XX/10) MHz
Gain by means of Volts/Volts, Frequency by means of Hertz.c
5% of tolerance for GBW at most is acceptable
Design steps:
* Use a cascaded two-stage MOSFET amplifier.
* Bias your design by using any bias topology. Magnitude of supply voltage should be an integer between 10 and 15V. Make sure that MOSFET operates in saturation mode.
*Determine all external capacitor values as 100 µF and external resistor values according to design specifications. W/L value must be an integer, the smallest possible value for L is 1.5 mm.
* For your design homework, refer to TUBITAK YITAL 1.5mm MOSFET model parameters:
(.model nmos nmos level=3 tox=230e-10 ld=0.125e-6cc wd=0.6e-6 uo=570 vto=0.7
+theta=0.05 rs=75 rd=75 delta=0.4 nsub=1.2e16 xj=0.15e-6 vmax=2.3e5
+eta=0.0022 kappa=0.5 nfs=7e11 gamma= 0.46 phi=0.35c
.model pmos pmos level=3 tox=230e-10 ld=0.06e-6 wd=0.6e-6 uo=230 vto=-0.66
+theta=0.17 rs=120 rd=120 delta=0.4 nsub=1.2e16 xj=0.3e-6 vmax=0
+eta=0.016 kappa=0.06 nfs=1e12 gamma=0.48 phi=0.35)
*Determine the threshold voltage and (µ*Cox) parameter for MOSFET and the parasitic capacitances of MOSFET from 1.5 µm model parameters.
(Hint: in saturation regionà Cgs=23WLCox+WLovCox

Cox=ɛoxtox
Design Specification is GainxBandwidth (MHz) according to last two digits of the student number (XX).
00-05: GainxBandwidth=(XX+3) MHz
06-09: GainxBandwidth = XX MHz
10-19: GainxBandwidth = (XX/2.5) MHz
20-49: GainxBandwidth = (XX/5) MHZ
50-79: GainxBandwidth = (XX/8) MHZ
80-99: GainxBandwidth = (XX/10) MHz
Gain by means of Volts/Volts, Frequency by means of Hertz.c
5% of tolerance for GBW at most is acceptable
Design steps:
* Use a cascaded two-stage MOSFET amplifier.
* Bias your design by using any bias topology. Magnitude of supply voltage should be an integer between 10 and 15V. Make sure that MOSFET operates in saturation mode.
*Determine all external capacitor values as 100 µF and external resistor values according to design specifications. W/L value must be an integer, the smallest possible value for L is 1.5 mm.
* For your design homework, refer to TUBITAK YITAL 1.5mm MOSFET model parameters:
(.model nmos nmos level=3 tox=230e-10 ld=0.125e-6cc wd=0.6e-6 uo=570 vto=0.7
+theta=0.05 rs=75 rd=75 delta=0.4 nsub=1.2e16 xj=0.15e-6 vmax=2.3e5
+eta=0.0022 kappa=0.5 nfs=7e11 gamma= 0.46 phi=0.35c
.model pmos pmos level=3 tox=230e-10 ld=0.06e-6 wd=0.6e-6 uo=230 vto=-0.66
+theta=0.17 rs=120 rd=120 delta=0.4 nsub=1.2e16 xj=0.3e-6 vmax=0
+eta=0.016 kappa=0.06 nfs=1e12 gamma=0.48 phi=0.35)
*Determine the threshold voltage and (µ*Cox) parameter for MOSFET and the parasitic capacitances of MOSFET from 1.5 µm model parameters.
(Hint: in saturation regionà Cgs=23WLCox+WLovCox

Cox=ɛoxtox
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